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| STS7PF30L P-CHANNEL 30V - 0.016 - 7A SO-8 STripFETTM II POWER MOSFET PRELIMINARY DATA TYPE STS7PF30L s s VDSS 30 V RDS(on) < 0.021 ID 7A s TYPICAL RDS(on) = 0.016 STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE SO-8 DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique "Single Feature SizeTM" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s BATTERY MANAGEMENT IN NOMADIC EQUIPMENT s POWER MANAGEMENT IN CELLULAR PHONES ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM PTOT Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25C Drain Current (continuous) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Value 30 30 20 7 4.4 28 2.5 Unit V V V A A A W (q) Pulse width limited by safe operating area Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed December 2002 1/6 STS7PF30L THERMAL DATA Rthj-amb(#) Tj Tstg Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose Typ Storage Temperature 50 150 -55 to 150 C/W C C (#) When mounted on 1 inch2 FR4 Board, 2 oz of Cu and t 10s ELECTRICAL CHARACTERISTICS (TJ = 25 C UNLESS OTHERRWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 A, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 C VGS = 20V Min. 30 1 10 100 Typ. Max. Unit V A A nA ON (1) Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS, ID = 250A VGS = 10V, ID = 3.5A VGS = 4.5V, ID = 3.5A Min. 1 0.011 0.016 Typ. 1.6 0.016 0.022 Max. 2.5 0.021 0.028 Unit V DYNAMIC Symbol gfs Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS = 10V, ID = 3.5A VDS = 25 V, f = 1 MHz, VGS = 0 Min. Typ. 16 2600 523 174 Max. Unit S pF pF pF 2/6 STS7PF30L ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON(2) Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 15V, ID = 3.5A RG = 4.7 VGS = 4.5 V (Resistive Load, Figure 3) VDD =15 V, ID = 7 A, VGS = 4.5V Min. Typ. 68 54 28 8.8 12 38 Max. Unit ns ns nC nC nC SWITCHING OFF(2) Symbol td(off) tf Parameter Turn-off-Delay Time Fall Time Test Conditions VDD =15 V, ID = 3.5 A, RG = 4.7, VGS = 4.5 V (Resistive Load, Figure 3) Min. Typ. 65 23 Max. Unit ns ns SOURCE DRAIN DIODE (2) Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 7 A, VGS = 0 ISD = 7A, di/dt = 100A/s, VDD = 24 V, Tj = 150C (see test circuit, Figure 5) 40 46 2.3 Test Conditions Min. Typ. Max. 7 28 1.2 Unit A A V ns nC A Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3/6 STS7PF30L Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 4/6 STS7PF30L SO-8 MECHANICAL DATA DIM. MIN. A a1 a2 a3 b b1 C c1 D E e e3 F L M S 3.8 0.4 4.8 5.8 1.27 3.81 4.0 1.27 0.6 8 (max.) 0.14 0.015 5.0 6.2 0.65 0.35 0.19 0.25 0.1 mm TYP. MAX. 1.75 0.25 1.65 0.85 0.48 0.25 0.5 45 (typ.) 0.188 0.228 0.050 0.150 0.157 0.050 0.023 0.196 0.244 0.025 0.013 0.007 0.010 0.003 MIN. inch TYP. MAX. 0.068 0.009 0.064 0.033 0.018 0.010 0.019 0016023 5/6 STS7PF30L Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. (c) The ST logo is a registered trademark of STMicroelectronics (c) 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. (c) http://www.st.com 6/6 |
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